PART |
Description |
Maker |
TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp. NEC[NEC]
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MC-4R128CPE6C-845 MC-4R128CPE6C MC-4R128CPE6C-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
Performance Semiconductor, Corp. NEC Corp. NEC[NEC]
|
UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL 64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
MBM29LV652UE-90 MBM29LV652UE-12 MBM29LV652UE |
64M (4M X 16) BIT
|
Fujitsu Component Limit... Fujitsu Limited Fujitsu Component Limited.
|
M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HYB39S64400BT-7.5 HYB39S64800BT-7.5 HYB39S64800BT- |
64M SDRAM Component
|
Infineon
|
MX23L6414XI-90 23L6414-10 23L6414-12 23L6414-90 MX |
64M-BIT MASK ROM
|
MCNIX[Macronix International]
|